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SB360

schottky barrier rectifier voltage: 20 TO 60v current: 3.0A

器件类别:分立半导体    二极管   

厂商名称:Gulf Semiconductor

厂商官网:http://www.gulfsemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Gulf Semiconductor
包装说明
O-PALF-W2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
LOW POWER LOSS
应用
EFFICIENCY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.74 V
JEDEC-95代码
DO-201AD
JESD-30 代码
O-PALF-W2
湿度敏感等级
1
最大非重复峰值正向电流
100 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
最大重复峰值反向电压
60 V
最大反向电流
500 µA
表面贴装
NO
技术
SCHOTTKY
端子形式
WIRE
端子位置
AXIAL
文档预览
SB320 THRU SB3100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds at terminals,
0.375" (9.5mm) lead length, 5lbs. (2.3Kg) tension
CURRENT 3.0Amperes
VOLTAGE 20 to 100 Volts
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
1.0(25.4)
MIN.
0.375(9.5)
0.285(7.2)
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
· Terminals : Plated axial leads, solderable per
MIL-STD-750, Method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.041 ounce, 1.15 gram
0.042(1.1)
0.037(0.9)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking Voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length(see Fig. 1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 3.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical junction capacitance (Note 3)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=100℃
I
R
C
J
JA
JL
T
J
T
STG
-55 to +125
-55 to +150
20
250
40.0
10.0
-55 to +150
V
RRM
V
RMS
V
DC
I(
AV
)
SB320
20
14
20
SB330
SB340
40
28
40
SB350
50
35
50
3.0
SB360
SB380 SB3100 Units
80
56
80
100
70
100
Volts
Volts
Volts
Amps
30
21
30
60
42
60
I
FSM
80.0
Amps
V
F
0.55
3.0
0.58
0.85
Volts
10
160
mA
P
F
℃/W
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to lead vrtical P.C.B. mounted, 0.5"(12.7mm) lead length
with 2.5X2.5"(63.5X63.5mm) copper pads
(3) Measured 1MHz and reverse voltage of 4.0 volts
RATINGS AND CHARACTERISTIC CURVES SB320 THRU SB3100
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
──
SB320-SB340
- - - SB350-SB3100
T
J
=T
J
MAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
4.0
3.0
40
PEAK FORWARD SURGE
CURRENT(AMPERES)
30
20
10
0
1
10
2.0
1.0
0
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5MM) LEAD LENGTH
0
20
50
75
100
125
150
175
LEAD TEMPERATURE (℃)
100
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
T
J
=125℃
FIG.4-TYPICAL REVERSE CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT (AMPERES)
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
T
J
=125℃
10
1
PULSE WIDTH=300
1% DUTY CYCLE
1
T
J
=75℃
0.1
0.1
T
J
=25℃
0.01
──
SB320-SB340
- - - SB350-SB3100
T
J
=25℃
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
──
SB320-SB340
- - - SB350-SB3100
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE(pF)
T
J
=25℃
f=1.0MHz
Vsig=50mVp-p
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
TRANSIENT THERMAL IMPEDANCE,℃/ W
10
100
1
──
SB320-SB340
- - - SB350-SB3100
10
0.1
1
10
100
REVERSE VOLTAGE. VOLTS
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100
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参数对比
与SB360相近的元器件有:。描述及对比如下:
型号 SB360
描述 schottky barrier rectifier voltage: 20 TO 60v current: 3.0A
是否Rohs认证 符合
厂商名称 Gulf Semiconductor
包装说明 O-PALF-W2
Reach Compliance Code unknown
ECCN代码 EAR99
其他特性 LOW POWER LOSS
应用 EFFICIENCY
外壳连接 ISOLATED
配置 SINGLE
二极管元件材料 SILICON
二极管类型 RECTIFIER DIODE
最大正向电压 (VF) 0.74 V
JEDEC-95代码 DO-201AD
JESD-30 代码 O-PALF-W2
湿度敏感等级 1
最大非重复峰值正向电流 100 A
元件数量 1
相数 1
端子数量 2
最高工作温度 150 °C
最低工作温度 -65 °C
最大输出电流 3 A
封装主体材料 PLASTIC/EPOXY
封装形状 ROUND
封装形式 LONG FORM
最大重复峰值反向电压 60 V
最大反向电流 500 µA
表面贴装 NO
技术 SCHOTTKY
端子形式 WIRE
端子位置 AXIAL
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